許健 | Gene Sheu
姓名 許健 | Gene Sheu
系所 資訊工程學系 兼任講座教授
經歷 .亞洲大學資訊工程學系教授
.中央研究院分子生物研究所博士後研究員
.大眾電腦股份有限公司執行副總經理
.工業技術研究院電子工業研究所研究員
.國立清華大學材料科學工程所兼任副教授
年度 論文名稱
2016 Aanand(Aanand)*、許健(Gene Sheu)、syed、Shao wei Lu, Gate Engineering in SOI LDMOS for Device Reliability, MATEC Web of Conferences matec , 2016, vol.2016 no.44
2016 Rava Deva(Rava Deva)*、許健(Gene Sheu)、楊紹明(Shao-Ming Yang), Fundamentals of side isolation LDMOS device with 0.35um CMOS compatible process -, e Manufacturing and design collaboration symposium 2016, vol.2016
2015 Vivek Ningaraju、楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、Md.Amanullah4、Erry Dwi Kurniawan、Subramanyaj6, Improvement of On-Resistance Degradation Induced by Hot Carrier, Applied Mechanics and Materials, vol.764-765 no.2015 pp.521-525
2015 Vivek Ningaraju、Antonius Fran Yannu Pramudyo、許健(Gene Sheu)、Erry Dwi Kurniawan、楊紹明(Shao-Ming Yang)、Jia-Wei Ma、Subramanyaj, Simulation of P-type Doping Profile Prediction Using, Applied Mechanics and Materials, vol.764-765 no.2015 pp.530-534
2015 楊紹明(Shao-Ming Yang)、hema、aryadeep、許健(Gene Sheu), HIGH VOLTAGE VOLTAGE VOLTAGE NLDMOS WITH MULTIPLE-RESURF MULTIPLE-RESURF MULTIPLE-RESURF ULTIPLE-RESURF STRUCTURE STRUCTURE STRUCTURE TRUCTURE TO, ECS Transactions, vol.2015 no.Mar
2015 S.L Shy、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、M.C Chen, .Negative e-beam resists using for nano-imprint lithography and silicone mold fabricatio, Proceedings of SPIE - The International Society for Optical Engineering, vol.9423 no.M pp.1-5
2015 楊紹明(Shao-Ming Yang)、P.A Chen、許健(Gene Sheu), A NOVEL HSPICE MACRO MODEL FOR THE ESD BEHAVIOR BEHAVIOR BEHAVIOR BEHAVIOR OF GATE, ECS Transactions, vol.Mar no.1 pp.1-5
2015 蔡宗叡(TSAI, JUNG-RUEY)、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD, International Symposium on the Physical and Failure Amalysis of Integrated Circuits, vol.2015 pp.318-321
2015 陳坤成(James K.C. Chen)、sl lee、Batchuluun、許健(Gene Sheu), TRIPLE HELIX THEORY OF MANAGEMENT OF TECHNOLOGY EDUCATION (MOTE): AN, International Association for Management of Technology, vol.2015 no.3 pp.2687-2696
2015 Vivek、Antonious、許健(Gene Sheu)、erry、楊紹明(Shao-Ming Yang), Simulation of P-type Doping Profile Prediction Using.Applied Mechanics and Materials, Applied Mechanics and Materials, vol.2015 no.APRIL pp.530-535=4
2015 ARYADEEP、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、AUNNY、王俊博、Amanulla, Optimization of Holding Voltage for 5V multi-finger NMOS using Voltage stepping simulation, Applied Mechanics and Materials, vol.2015 no.april pp.526-529
2014 Erry Dwi Kurniawan、Antonius Fran Yannu Pramudyo、Ankit Kumar、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Investigation of Current Density and Hotspot Temperature Distribution Effects on, ECS Transactions, vol.60 no.1 pp.939-944
2014 Erry、Vivek、許健(Gene Sheu)、Antonious、hema、楊紹明(Shao-Ming Yang)、P.A.Chen, Study of Different Spatial Charge Trapping distribution effect on off-state degradation, 2014 IEEE 8th International Power Engineering and Optimization Conference (PEOCO2014), Langkawi, The Jewel of Kedah,, vol.2014 pp.199-203
2014 hema、許健(Gene Sheu)、aryadeep、erry、楊紹明(Shao-Ming Yang)、PA chen, Optimization of NLDMOS Structure for Higher breakdown voltage and lower on-resistance, 2014 IEEE 8th International Power Engineering and Optimization Conference (PEOCO2014), Langkawi, The Jewel of Kedah,, vol.2014 pp.150-153
2014 Hema、許健(Gene Sheu)、aryadeep、楊紹明(Shao-Ming Yang), A Study of Interstitial Effect on UMOS Performance, 2014 IEEE 8th International Power Engineering and Optimization Conference (PEOCO2014), Langkawi, The Jewel of Kedah,, vol.2014 pp.178-181
2014 Vivek、pradahana、許健(Gene Sheu)、王俊博、Subramaya、Amanullah、Sharma、楊紹明(Shao-Ming Yang), An Accurate Prediction for as-Implanted Doping Profile Calibration Using Different Ion Implantation, 2014 IEEE 8th International Power Engineering and Optimization Conference (PEOCO2014), Langkawi, The Jewel of Kedah,, vol.2014 pp.408-412
2014 Erry Dwi Kurniawan、Antonius Fran Yannu Pramudyo、, Ankit Kumar、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Investigation of Current Density and Hotspot Temperature Distribution Effects on P-channel LDMOSFET Unclamped Inductive Switching (UIS) Test, ECS Transactions, vol.60 no.1 pp.939-944
2014 Anil Kumar T V、Min-Cheng Chen、許健(Gene Sheu)、楊紹明(Shao-Ming Yang), High Performance Gallium Nitride GAA Nanowire with 7nm diameter for Ultralow-Power Logic Applications, ECS Transactions, vol.60 no.1 pp.1045-1050
2014 Anil Kumar T V、楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、P.A Chen, A Low-cost 900V rated Multiple RESURF LDMOS Ultrahigh-Voltage Device MOS Transistor Design without EPI Layer, ECS Transactions, vol.60 no.1 pp.97-102
2014 Aryadeep Mrinal、Vijay Kumar M P、Vivek N, Manjunatha M、許健(Gene Sheu)、楊紹明(Shao-Ming Yang), Optimization of SiC Schottky Diode using Linear P-top for Edge, IEEE Nanotechnology Materials and Device Conference 2013, vol.2013 pp.24-27
2014 Rahul Kumar、EmitaYulia Hapsari、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、, Anil Kumar TV, A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom, IEEE Nanotechnology Materials and Device Conference 2013, vol.2013 pp.84-87
2013 Vijay Kumar M P、Grama Srinath Shreyas、Karuna Nidhi、Neelam Agarwal、, Ankit Kumar,、許健(Gene Sheu)、楊紹明(Shao-Ming Yang), Effect of Trench Depth and Trench Angle in a High Voltage, IEEE Nanotechnology Materials and Device Conference 2013, vol.2013 pp.74-77
2013 Manjunatha、Vasantha Kuma、Anil Kumar、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Ron Improvement with Duplex Conduction Channel in UHV Device, 2013 IEEE 7th International Power Engineering and Optimization Conference (PEOCO), vol.2013 pp.83-86
2013 Chinmoy Khaund、Shreyas、Vijay Kumar、Neelam、Karuna、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Verification of Ruggedness and Failure in LDMOS under UIS, 2013 IEEE 7th International Power Engineering and Optimization Conference (PEOCO), vol.2013 pp.288-292
2013 Emita Yu!ia Hapsari、Rahu! Kumar、許健(Gene Sheu)、楊紹明(Shao-Ming Yang), Process Integration of Best in Class Specific-on Resistance of 20V to 60V O.18J.lID Bipolar CMOS DMOS Technology, IEEE Nanotechnology Materials and Device Conference 2013, vol.2013 pp.16-19
2013 Jaipal Reddy、Vijay Kumar M P、Shreyas、Hema E P、許健(Gene Sheu)、楊紹明(Shao-Ming Yang), Optimization of LIGBT for low forward voltage and turn off time, 2013 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA), vol.2013 pp.152-155
2013 Manjunatha、Vasanth、anil kumar、Jaipal Kumar、楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、P.A Chen, Ron Improvement with Duplex Conduction Channel, International Power engineering and optimization conference, vol.2013 no.6 pp.83-87
2013 Hua Ting Ting、Guo yu-feng、yu ying、許健(Gene Sheu), analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region, Chinese Physics B, vol.22 no.5 pp.058501-1-058501-
2013 JiaFei Yao、Yufeng Guo、Tingting Hua、Shi Huang、Changchun Zhang、Xiaojuan Xia、許健(Gene Sheu), Novel Silicon-on-Insulator Lateral Power Device with Partial Oxide Pillars in the Drift Region, JAPANESE JOURNAL OF APPLIED PHYSICS, vol.52 no.2013 pp.014302-1-014302-
2013 Tingting Hua、Yufeng Guo、Ying Yu、許健(Gene Sheu)、Jiafei Yao, An Analytical Model of Triple RESURF Device with Linear P‑layer Doping Profile, IETE TECHNICAL REVIEW, vol.30 no.1 pp.31-37
2012 Anumeha、Adarsh、許健(Gene Sheu), Study of energy capability and failure of LDMOSFET at different ambient temperatures, ISCDG 2012, vol.2012 no.2012 pp.127-130
2012 lun Huang、Tingting Hual、Yufeng Guo、Yue Xu、Xiaojuan Xia、Ying Zhang、許健(Gene Sheu), Numerical Simulation of Static and Dynamic Operation Performance of SOl VLT LDMOS Considering Electrical-thermal Couple Effects, international workshop of junction technology, vol.2012 no.10 pp.156-159
2012 Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance, ECS Transactions, vol.229 no.231 pp.2077-2081
2012 Mohammed Sadique Anwar、Prima Sukma Permata、Md. Imran Siddiqui、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery, Applied Mechanics and Materials, vol.229 no.231 pp.2077-2081
2012 Tingting Hua(Tingting Hua)*、Yufeng Guo,、Ying Yu、許健(Gene Sheu)、Xiaojuan Xia、Changchun Zhang, A 2‑D Analytical Model of SOI High‑voltage Devices with Dual Conduction Layers, IETE TECHNICAL REVIEW, vol.29 no.4 pp.346-354
2012 adarsh、anumeha、許健(Gene Sheu), Energy Capability of LDMOS as a Function of Ambient Temperature, ULIS 2012, vol.2012 pp.65-68
2012 MANOJ kUMAR、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang), A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure, ECS Transactions, vol.44 no.1 pp.1285-1289
2011 aloysius Herlambang、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、Priyono Sulistyanto, ESD simulation on GGNMOS for 40V BCD, tencon 2010, vol.2010 pp.978-990
2011 Rudy Octavius Sihombing、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、Hutomo Suryo Wasisto、Yu-Feng Guo, An 800 Volts High Voltage Interconnection Level, tencon 2010, vol.2010 no.2010 pp.71-74
2011 rudy Sihombing、許健(Gene Sheu)、hutomo wasisto、aloysius herambang, A 2-dimensional mesh study using sentaurus simulator, 2010 IRAST International Congress on Computer Applications and computational science, vol.2010 no.2010
2011 Hutomo Suryo Wasisto、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、Rudy Octavius Sihombing、Yufeng Guo, A Novel 800V Multiple RESURF LDMOS Utilizing, tencon 2010, vol.2010 no.2010 pp.75-77
2011 Aloysius Priartanto Herlambang、許健(Gene Sheu)、郭宇鋒(Yufeng Guo)、Hutomo Suryo Wasistoa, LDMOS Thermal SOA Investigation of a Novel 800V Multiple RESURF with, ECS Transactions, vol.34 no.1 pp.979-984
2010 楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai), A 5V/200V SOI Device with a Vertically Linear Graded Drift Region, ICSICT 2010, vol.2010 no.2010 pp.1838-1840
2010 許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、張怡楓(Yi-Fong Chan)、曹世昌(Shyh Chang Tsaur), An Analytical Model of Surface Electric Field Distributionsin in Ultrahigh-Voltage Metal–Oxide–Semiconductor Devices, JAPANESE JOURNAL OF APPLIED PHYSICS, vol.49 no.2010 pp.074301-1-074301-
2010 林敬哲(Chin-Che Lin)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、郭宇鋒(Yu-Feng Guob), Combining 2D and 3D Device Simulations for Optimizing LDMOS Design, ECS Transactions, vol.27 no.1 pp.125-129
2010 許健(Gene Sheu)、林盈宏(Yin-Huang Lin)、曾文錦(Wen-Chin Tseng)、楊紹明(Shao-Ming Yang)、陳兆南、郭宇鋒(Yu-Feng Guo), Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits, ECS Transactions, vol.27 no.1 pp.103-108
2010 許健(Gene Sheu)、吳承炎(Cheng-yen Wu)、楊紹明(Shao-Ming Yang)、郭宇鋒(Yu-Feng Guo), Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness, ECS Transactions, vol.27 no.1 pp.115-120
2010 郭宇锋(GUO Yu-Feng)、王志功(WANG Zhi-Gong)、許健(Gene Sheu), A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques, CHINESE PHYSICS LETTERS, vol.27 no.6 pp.067301-1-067301-
2009 郭宇峰(Yufeng Guo)、Zhigong Wang、許健(Gene Sheu), A Three-dimensional Breakdown Model of SOI Lateral Power Transistors with a Circular Layout, Journal of Semiconductors, vol.30 no.11 pp.114006-1-114006-
2009 游信強(Hsin-Chiang You)、曹世昌(Shyh-Chang Tsaur)、許健(Gene Sheu), Simulation Details for the Electrical Field Distribution and Breakdown Voltage of 0.15μm Thin Film SOI Power Device, Semiconductor Science and Technology, vol.18 no.1 pp.129-133
2009 游信強(Hsin-Chiang You)、曹世昌(Shyh-Chang Tsaur)、許健(Gene Sheu), Simulation Details for the Electrical Field Distribution and Breakdown Voltage of 0.15μm Thin Film SOI Power Device, Semiconductor Science and Technology, vol.18 no.1 pp.129-133
2009 許健(Gene Sheu)、楊紹明(Shao-Ming Yang), A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology, Semiconductor Science and Technology, vol.18 no.1 pp.123-124
2009 許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、曹世昌(Shyh-Chang Tsaur)、郭宇峰(Yu-Feng Guo), Comparison of High Voltage (200-300 Volts) Devices for Power Integrated Circuits, SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2009 楊紹明(Shao-Ming Yang)、許健(Gene Sheu), The Reliability of 200V P-channel Silicon-On-Insulator LDMOS on High Side operation, APPLIED PHYSICS LETTERS
2009 郭宇峰(Yufeng Guo)、Zhigong Wang、許健(Gene Sheu), A Three-dimensional Breakdown Model of SOI Lateral Power Transistors with a Circular Layout, Journal of Semiconductors, vol.30 no.11 pp.114006-1-114006-
2009 許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、曹世昌(Shyh-Chang Tsaur), An Analytical Model for Surface Electric Field Distributions in Ultra High Voltage (800V) Buried P-top LDMOS Devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY
發表日期 論文名稱
2012.09 Karuna Nidhi、Neelam Agarwal、Purwardi, Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive , SISPAD 2012, Denver, CO, USA
2012.09 adrash、Anumeha、許健(Gene Sheu), ISCDG 2012, Grenoble,France
2012.09 Anumeha、Adrash, Study of energy capability and failure of LDMOSFET at different ambient temperatures , ISCDG 2012, Grenoble,France
2012.09 Surya Kris Amethystna1、Karuna Nidhi1、楊紹明(Shao-Ming Yang)、許健(Gene Sheu), Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface , IEEE-ICSE2012 Proc., 2012, Kuala Lumpur, Malaysia
2012.09 Md. Imran Siddiquia、Abijith Prakasha、Mohammed Sadique Anwara、P.A Chen, Mechanism and Improvement of Breakdown Degradation Induced by Interface Charge in UHV , IEEE-ICSE2012 Proc., 2012, Kuala Lumpur, Malaysia
2012.08 Prima POermatel、Mohammed Anwar、Md Siddiquil、楊紹明(Shao-Ming Yang), Analysis of LDMOS for Effect of Finger and Device, width on Gate Feedback - 2012 International Conference on Optoelectronics and Microelectronics (ICOM), 中國 長春
2012.08 Optimization of ESD Protection Device Using SCR Structure of a Novel STI, sided LDMOS with P-top - 2012 International Conference on Optoelectronics and Microelectronics (ICOM), 中國 長春
2009.12 Combining 2D and 3D Device Simulation for Optimizing LDMOS Design , 2009 IEEE International Conference on Electronics Circuits and Systems , Medina, Yasmine Hammamet -Tunisia
2009.08 Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices , 2009 ICEMI , Beijing,china
2009.07 郭宇鋒(Yufeng Guo)、王至剛(Zhigong Wang1)、許健(Gene Sheu), VARIATION OF LATERAL THICKNESSTECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE , 2009 International Conference on Communications, Circuits and Systems(ICCCAS2009) , San Jose, Milpitas
2009.05 許健(Gene Sheu)、楊紹明、許愉珊, A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology , istc cstic 2009 , Shanghai
2009.03 Hsin-Chiang You、Yen-Ling Liu、Shyh-chang Tsaur、許健(Gene Sheu), Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device , The Electrochemical Society Transaction 2009 (◎ISTC CSTIC 2009) , Shanghai
a130615690
Reduced Kink Effect in An SOI LDMOS Structure with Graded Drift Region Thickness
計畫名稱 參與人 計畫期間
世界先進半導體公司委託研究 (20121112144247) 許健(Gene Sheu)、楊紹明(Shao-Ming Yang) 2012.10 ~ 2013.09
新唐科技委託研究 (20120302101742) 許健(Gene Sheu) 2011.09 ~ 2013.08
經濟部智慧電子學院 (經濟部智慧電子學院) 楊紹明(Shao-Ming Yang) 2011.03 ~ 2011.09
臺灣積體電路有限公司委託研究 (20120302101314) 許健(Gene Sheu) 2010.09 ~ 2012.08
與世界先進積體電路股份有限公司產學合作 (9700000198 ) 許健(Gene Sheu) 2009.05 ~ 2009.07
經濟部教育部產學合作碩士班 (經濟部教育部產學合作碩士班) 許健(Gene Sheu) 2008.09 ~ 2009.08
與世界先進積體電路股份有限公司產學合作 (9700000086 ) 許健(Gene Sheu) 2008.05 ~ 迄今
課程類別 課程代碼 課程名稱 年度
研究所碩士班 EE200172A Semiconductor Manufacturing Technology 107
研究所碩士班 EE200147A Semiconductor Process Engineering 107
研究所碩士班 EE200016A 研究論文寫作 107